2007-04-27 1 bcx42 1 2 3 pnp silicon af and switching transistor ? for general af applications ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary type: bcx41 (npn) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package bcx42 dks 1 = b 2 = e 3 = c sot23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 125 v collector-base voltage v cbo 125 emitter-base voltage v ebo 5 collector current i c 800 ma peak collector current i cm 1 a base current i b 100 ma peak base current i bm 200 total power dissipation t s 79 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 215 k/w 1 pb-containing package may be available upon special request 2 for calculation of r thja please refer to application note thermal resistance
2007-04-27 2 bcx42 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 125 - - v collector-base breakdown voltage i c = 100 a, i e = 0 v (br)cbo 125 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 100 v, i e = 0 v cb = 100 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a collector-emitter cutoff current v ce = 100 v, t a = 85 c v ce = 100 v, t a = 125 c i ceo - - - - 10 75 emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 a, v ce = 1 v i c = 100 ma, v ce = 1 v i c = 200 ma, v ce = 1 v h fe 25 63 40 - - - - - - - collector-emitter saturation voltage 1) i c = 300 ma, i b = 30 ma v cesat - - 0.9 v base emitter saturation voltage 1) i c = 300 ma, i b = 30 ma v besat - - 1.4 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 12 - pf 1 pulse test: t < 300s; d < 2%
2007-04-27 3 bcx42 dc current gain h fe = ? ( i c ) v ce = 1 v 10 10 10 10 bcx 42/bss 63 ehp00435 h ma -1 0 2 3 fe 3 10 10 2 1 10 5 5 1 10 150 25 -50 555 c ?c ?c ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 400 800 bcx 42/bss 63 ehp00433 v ce sat mv ma 10 3 0 10 10 10 1 10 10 2 10 5 5 5 10 200 600 150 25 -50 -1 c ?c ?c ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 10 0 1 3 bcx 42/bss 63 ehp00432 v be sat 10 ma 10 10 10 3 2 1 0 -1 5 5 5 v 25 150 -50 2 c ?c ?c ?c collector current i c = ? ( v be ) v ce = 1v 10 0 1 3 bcx 42/bss 63 ehp00429 v be 10 ma 10 10 10 3 2 1 0 -1 5 5 5 v 25 150 -50 2 t a = c ?c ?c ?c
2007-04-27 4 bcx42 collector cutoff current i cbo = ? ( t a ) v cbo = 100 v 10 0 50 100 150 bcx 42/bss 63 ehp00434 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ?c transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 10 10 10 bcx 42/bss 63 ehp00431 f ma mhz 0123 5 t 3 10 10 2 1 10 5 5 5 c collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb ) 0 10 20 30 40 50 60 70 pf 90 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 mw 550 p tot bcw66k bcw66
2007-04-27 5 bcx42 total power dissipation p tot = ? ( t s ) 10 ehp00430 bcx 42/bss 63 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2007-04-27 6 bcx42 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2007-04-27 7 bcx42 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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